* Fast Switching
* Low ON Resistance(Rdson≤0.28Ω)
* Low Gate Charge (Typical Data: 12.6nC)
* Low Reverse transfer capacitances(Typical: 8.8pF)
*.

Power switch circuit of adaptor and charger. Absolute（TJ= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID I.

CS9N20 A4R, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe.

CS9N20A3R

CS9N20A8R

CS9N20FA9R

CS9N90AKRD-G

CS9N90ANHD

CS9N90FA9D

CS9N90FA9RD

CS9N90FA9RD-G

CS90-E2GA152MYNS

CS9000

CS9012

CS902-A-R

CS90N03A3